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APTC60AM70T1G Phase leg Super Junction MOSFET Power Module 5 Q1 7 8 Q2 9 10 3 4 NTC 6 11 VDSS = 600V RDSon = 70m max @ Tj = 25C ID = 39A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration * 1 2 12 * * Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 600 39 29 160 20 70 250 20 1 1800 Unit V A V m W A mJ August, 2007 1-6 APTC60AM70T1G - Rev 0 Tc = 25C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC60AM70T1G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25C Tj = 125C 2.1 Typ VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = 20 V, VDS = 0V 3 Max 25 250 70 3.9 100 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 39A RG = 5 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 39A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 39A, RG = 5 Min Typ 7 2.56 0.21 259 29 111 21 30 283 84 670 980 1096 1206 J J ns nC Max Unit nF Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 39A IS = - 39A VR = 350V diS/dt = 100A/s Tj = 25C Tj = 25C 580 23 Min Typ 39 29 Max Unit A 1.2 6 V V/ns ns C August, 2007 2-6 APTC60AM70T1G - Rev 0 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 39A di/dt 100A/s VR VDSS Tj 150C www.microsemi.com APTC60AM70T1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 2.5 Typ Max 0.5 150 125 100 4.7 80 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 Min Typ 50 3952 Max Unit k K SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTC60AM70T1G - Rev 0 August, 2007 APTC60AM70T1G Typical Performance Curve 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 200 ID, Drain Current (A) 6.5V 6V 5.5V Transfert Characteristics 140 ID, Drain Current (A) 120 100 80 60 40 20 0 0 TJ=125C TJ=25C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 160 120 80 VGS=15&10V 5V 40 0 0 4.5V 4V 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 25 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance 1.1 1.05 1 0.95 0.9 0 10 20 30 40 50 60 ID, Drain Current (A) ID, DC Drain Current (A) Normalized to VGS=10V @ 19.5A VGS=10V DC Drain Current vs Case Temperature 40 35 30 25 20 15 10 5 0 August, 2007 4-6 APTC60AM70T1G - Rev 0 VGS=20V 25 50 75 100 125 TC, Case Temperature (C) 150 www.microsemi.com APTC60AM70T1G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 1000 ID, Drain Current (A) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area VGS=10V ID= 39A 100 limited by RDSon 100 s 10 Single pulse TJ=150C TC=25C 1 10 100 1 ms 10 ms 1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 August, 2007 5-6 APTC60AM70T1G - Rev 0 10000 ID=39A TJ=25C VDS=120V VDS=300V VDS=480V 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com APTC60AM70T1G 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 td(off) Rise and Fall times vs Current VDS=400V RG=5 TJ=125C L=100H 100 tr and tf (ns) 80 60 40 20 0 250 200 150 100 50 0 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Current 2.5 VDS=400V RG=5 TJ=125C L=100H td(on) VDS=400V RG=5 TJ=125C L=100H tf tr 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Gate Resistance 5 Switching Energy (mJ) 4 3 2 1 0 VDS=400V ID=39A TJ=125C L=100H Switching Energy (mJ) 2 1.5 Eoff Eon Eoff 1 0.5 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70 Eon Eoff 0 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) Operating Frequency vs Drain Current 120 Frequency (kHz) 100 80 60 40 20 0 5 hard VDS=400V switching ZVS IDR, Reverse Drain Current (A) 140 Source to Drain Diode Forward Voltage 1000 100 TJ=150C D=50% RG=5 TJ=125C TC=75C 10 TJ=25C ZCS 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 August, 2007 APTC60AM70T1G - Rev 0 10 15 20 25 30 ID, Drain Current (A) 35 VSD, Source to Drain Voltage (V) "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 |
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